The University of Arkansas has initiated the construction of a national silicon carbide (SiC) research and fabrication center with funding amounting to $18 million from the National Science Foundation (NSF) and supplemental support from the Army Research Laboratory. SiC, a robust semiconductor known for its superior performance in elevated temperature conditions, presents significant potential across a range of applications, including both military and general electronic devices: https://www.eetimes.com/u-of-arkansas-to-build-groundbreaking-sic-research-facility/
UA Power Group’s Jingxian Wu Named IEEE Fellow
The Institute of Electrical and Electronics Engineers (IEEE) has named Dr. Jingxian Wu an IEEE fellow. This title is awarded by the IEEE upon a person with an outstanding record of accomplishments in any of the IEEE fields of interest. Only 0.1% of the IEEE voting...