The University of Arkansas has initiated the construction of a national silicon carbide (SiC) research and fabrication center with funding amounting to $18 million from the National Science Foundation (NSF) and supplemental support from the Army Research Laboratory. SiC, a robust semiconductor known for its superior performance in elevated temperature conditions, presents significant potential across a range of applications, including both military and general electronic devices: https://www.eetimes.com/u-of-arkansas-to-build-groundbreaking-sic-research-facility/
$3.5M Award Boosts Power Electronics Research at U of A
The University of Arkansas has secured a $3.5 million award from the National Institute of Standards and Technology to elevate its roles as a leader in power-electronics research and development. The funding will support upgrades to the High Density Electronics Center...
