The University of Arkansas has initiated the construction of a national silicon carbide (SiC) research and fabrication center with funding amounting to $18 million from the National Science Foundation (NSF) and supplemental support from the Army Research Laboratory. SiC, a robust semiconductor known for its superior performance in elevated temperature conditions, presents significant potential across a range of applications, including both military and general electronic devices: https://www.eetimes.com/u-of-arkansas-to-build-groundbreaking-sic-research-facility/
Anna Corbitt Takes on New Role as Test Engineer for NCREPT
Anna Corbitt, previously a senior research assistant, has taken on the role of test engineer at the National Center for Reliable Electric Power Transmission. In this position, Corbitt will oversee testing protocols for cutting-edge electrical systems, focusing...
